Improvement of Mg-Doped GaN with Shutter-Controlled Process in Plasma-Assisted Molecular Beam Epitaxy
نویسندگان
چکیده
Mg-doped GaN was grown by plasma-assisted molecular beam epitaxy (PAMBE) on a Fe-doped template substrate employing shutter-controlled process. The transition from n-type to p-type conductivity of in relation the N/Ga flux ratio studied. highest carrier concentration this series 3.12 × 1018 cm−3 under most N-rich condition. By modulating shutters different effusion cells for process, wide growth window obtained. It found that presence Mg effectively prevents formation structural defects epi-layers, resulting improvement crystal quality and mobility.
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ژورنال
عنوان ژورنال: Crystals
سال: 2023
ISSN: ['2073-4352']
DOI: https://doi.org/10.3390/cryst13060907